IHW50N65R6

Overview

650 V, 50 A IGBT with monolithically integrated diode in TO-247 package

Reverse Conducting R6 650 V, 50 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.

Thanks to best system performances and  high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.

Summary of Features

  • Very low VCEsat and low Eoff
  • High ruggedness and stable temperature behavior
  • Easy parallel switching capability due to positive temperature coefficient in VCEsat
  • Frequency range 20-75 kHz
  • Low EMI
  • Very tight parameter distribution 
  • Maximum operating TJ of 175 °C

Benefits

  • Lowest losses on IGBT, high system efficiency for higher power output
  • Fast and easy replacement of predecessor R5 portfolio
  • High device reliability
  • Good EMI behaviour
Diagrams
Training

RC-H6 650 V Reverse Conducting IGBT

This training introduces RC-H6 650 V Reverse Conducting IGBT technology for half-bridge induction cooking.

Support