Active and preferred
RoHS Compliant
Lead-free

IHW50N65R6

650 V, 50 A IGBT with monolithically integrated diode in TO-247 package
Data Sheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

IHW50N65R6
IHW50N65R6
ea.
Data Sheet

Product details

  • Eoff (Soft Switching)
    0.2 mJ
  • Eoff (Hard Switching)
    0.66 mJ
  • Eon
    1.5 mJ
  • IC (@ 25°) max
    100 A
  • IC (@ 100°) max
    65 A
  • ICpuls max
    150 A
  • IF max
    39 A
  • IFpuls max
    150 A
  • Irrm
    37 A
  • Package
    TO-247-3
  • Ptot max
    251 W
  • QGate
    199 nC
  • Qrr
    2500 nC
  • RGint
    0 Ω
  • RG
    10 Ω
  • Switching Frequency
    20 kHz to 75 kHz
  • td(off)
    261 ns
  • td(on)
    21 ns
  • Technology
    IGBT RC Soft Switching
  • tf
    14 ns
  • tr
    25 ns
  • VCE(sat)
    1.3 V
  • VCE max
    650 V
  • VF
    1.51 V
Recommended
OPN
IHW50N65R6XKSA1
Product Status active and preferred
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO247-3
Package Name TO247
Packing Size 240
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Reverse Conducting R6 650 V, 50 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.

Features

  • Very Low VCEsat & low Eoff
  • High ruggedness
  • Stable temperature behavior
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Frequency range 20-75 kHz
  • Low EMI
  • Very tight parameter distribution
  • Maximum operating TJ of 175 °C

Benefits

  • Lowest losses on IGBT
  • replacement of predecessor R5
  • High device reliability
  • Good EMI behaviour
  • high system efficiency
  • higher power output

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }