Automotive IGBT Discretes

Overview

Fully automotive-qualified product portfolio supporting a wide range of motors, generators and power classes

Infineon offers an extensive and dedicated range of automotive AEC-Q101-qualified IGBTs from 600 to 1200 V and up to 160 A. Specially designed for hybrid and electric vehicles, both the IGBT and diode are optimized to provide the best performance for applications ranging from low to ultra-high switching frequencies. Available in a wide variety of packages from D2 PAK and TO-247 to high-performance packages such as Super-TO-220 and Super-TO-247, the portfolio has suitable packaging solutions to enable higher current handling or the realization of creepage requirements, as well as benchmark-level performance.

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What is Infineon's EDT2 technology about?

The benchmark 750V EDT2 IGBT technology significantly improves the energy efficiency for automotive applications with DC link voltages up to 470 V, due to remarkably reduced switching and conduction losses. Combined with the outstanding Infineon quality, the performance and dependability of inverter systems can therefore be considerably increased.

The EDT2 technology has an extremely tight parameter distribution and a positive thermal coefficient. This enables easy paralleling operation, providing system flexibility and power scalability to the final designs.

Products with EDT2 can feature both a higher blocking voltage and 20% lower saturation voltage compared to established IGBT3. The optimization of the cell structure allows the switching with high gradients. Furthermore, the rugged design avoids latch-ups and allows sufficient short-circuit protection.

Key Features Benefits Applications
  • 750V blocking voltage
  • Superior light load performance
  • Max junction temperature 175°C
  • Very low VCEsat
  • Low switching losses
  • High ruggedness (e.g. overload)
  • Enabling battery voltages up to 470V for significant efficiency increase and reduced cooling effort
  • High switching frequencies
  • Extremely robust design
  • Lowest power dissipation at high current rating
  • Easy for system in parallel application
  • Main Inverter
  • DC Link Discharge Switch
  • DC/DC converter
  • Auxiliary drives
  • Motor Drives

Infineon’s brand new TRENCHSTOP™ 5 AUTO IGBT technology redefines “Best-in-Class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. It is a revolution in the IGBT world to match the market’s highest efficiency demand of tomorrow, means when highest efficiency, lower system cost and increased reliability is required, TRENCHSTOP™ 5 is the only option. It provides drastic reduction in switching and conduction losses. 

The TRENCHSTOP™ 5 AUTO is available in two versions - H5 (high speed) and F5 (highest efficiency):

Key Features Benefits Applications
  • 650V blocking voltage
  • Max junction temperature 175°C
  • Very low conduction and switching losses
  • Very low junction and case temperature
  • High power density design
  • Positive temperature coefficient in V CEsat
  • 50V higher blocking voltage
  • Highest efficiency
  • High device reliability
  • Low temperature leads to less cooling efforts
  • Less system cost
  • Fast switching automotive applications
  • On-Board Charger
  • PFC
  • DC/DC converter
  • DC/AC converter

Combination of IGBT with soft recovery Emitter Controlled-Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Key Features Benefits Applications
  • Low V CEsat for low conduction losses
  • Max. junction temperature 175°C
  • Short circuit capability of 5μs
  • Low EMI emissions
  • Very soft, fast recovery anti-parallel diode
  • Very tight parameter distribution
  • Positive temperature coefficient in VCEsat
  • Suitable for low switching frequencies
  • High temperatur capable
  • Very good EMI behavior
  • High ruggedness, temperature stable behavior
  • High device reliability
  • Applicable for high level of device paralleling
  • Main Inverter/Drive Train
  • AUX Inverter (AirCon Compressor, PTC Heater)
  • Motor

RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution by offering space saving advantages due to monolithically integrated diode. Furthermore the technology provides outstanding performance for smooth switching behavior and low EMI levels even at the maximum junction temperature of 175°C.

Key Features Benefits Applications RC-DA < 8kHz Applications RC-DFA > 5kHz
  • Optimized parameters for up to 20% lower switching losses
  • Operating range of DC to 30kHz
  • Max junction temperature 175°C
  • Short circuit capability of 5µs
  • Very tight parameter distribution
  • Best in class current versus package size performance
  • Smooth switching performance leading to low EMI levels
  • Excellent cost/performance for hard switching applications
  • Outstanding temperature stability
  • Very good EMI behavior
  • Up to 60% space saving on the PCB
  • Higher reliability due to monolithically integrated IGBT and diode due to less thermal cycling during switching
  • Piezo Injection
  • HID Lighting
  • Pumps
  • Small Drives
  • Piezo Injection
  • HID Lighting
  • Low Power Motor Driv
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IGBT Discretes for HVAC e-Compressor systems in e-Mobility

  • Understand what an HVAC system is and how it works in electrical vehicles
  • Know the IGBT market, why they are a preferred customer choice for e-Mobility and what Infineon has to offer to this field
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