IRS2005M

Overview

200 V high-side and low-side gate driver IC with VCC & VBS UVLO ensuring reliable start-up operation

Description:

200 V High and Low Side Driver IC with typical 0.29 A source and 0.6 A sink currents in MLPQ 4x4 14L package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.

Summary of Features:

  • Floating gate driver designed for bootstrap operation
  • Fully operational to +200 V
  • Gate drive supply range up to 20 V per channel
  • Undervoltage lockout for VCC, VBS
  • 3.3 V, 5 V, and 15 V logic input compatible
  • Tolerant to negative transient voltage
  • Matched propagation delay
  • Designed for use with bootstrap power supplies
  • Output in phase with the Inputs
  • -40°C to 125°C operating range

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An Introduction to Infineon Gate Drivers

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EiceDRIVER™ 2EDL Driver IC Family

EiceDRIVER™ 2EDL is a 600V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology, which integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications. 

2:41

Advantages of Infineon SOI Technology

1200 V Silicon-On-Insulators level-shift gate drivers from the market leader. This video demonstrates the advantages of products with Infineon SOI. E.g. Integrated bootstrap diode, Low level-shift losses - saving space and cost.

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58:35

Webinar: Every Switch needs a Driver - The right Driver makes a Difference

We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.

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