High and Low Side Drivers
High side and low side gate driver ICs to control MOSFETs and IGBTs
Our gate driver IC solutions are the expert’s choice. We offer high and low side gate drivers with two non-interlocked channels.
Now including the new 650 V high and low side silicon on insulator (SOI) gate driver ICs with high current (2.5 A) and low current (0.7 A) option. With excellent ruggedness and noise immunity, these gate drivers are perfect for motor drives, home appliance, SMPS, battery powered applications and high power lighting.
Find detailed information
Typical high and low side driver connection diagram
This might also be of interest for you
Recommended documents
This training features how the level-shift gate drivers work, what are negative voltage transient and how they affect level-shift gate drivers. In addition you will learn about the technology difference between Junction isolation and Infineon’s Silicon-On-Insulator technology.
You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.
For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
We offer a large portfolio of level shift high voltage gate drivers – silicon-on-insulator (SOI) and junction isolated (JI) technologies. Learn about the advantages of Infineon SOI gate driver: integrated bootstrap diode, Low level-shift losses, saving space and cost, and negative VS robustness.
