2ED020I12-FI

Overview

1200 V half-bridge gate driver IC with galvanic isolation, comparator and OPAMP

EiceDRIVER™ 1200 V half-bridge Gate Driver IC for IGBT, MOSFET and SiC MOSFET with typical 1.5 A source and 2.5 A sink currents in PG-DSO-18 package.

Summary of Features

  • 1200 V coreless transformer isolated Driver ICs
  • Rail-to-rail outputs
  • Protection function
  • Floating high side driver
  • Undervoltage lockout for both channels
  • 3.3 V and 5 V TTL compatible inputs

Benefits

  • Space saving package
  • Improved energy efficiency

Potential Applications

Diagrams
Videos
7:03

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

1:41

Galvanic isolated Gate Drivers with Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

9:21

EiceDRIVER™ 2EDL Driver IC Family

EiceDRIVER™ 2EDL is a 600V half bridge gate driver IC family basing on level-shifter SOI (Silicon on Insulator) technology, which integrates low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications. 

Training

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

29:16

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

How to choose gate driver for IGBT discretes and modules

30:25

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

29:16

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Support