1EDN7116G - Infineon Technologies

Overview

EiceDRIVER™ 200 V high-side TDI gate driver IC optimized for CoolGaN™ SG HEMTs and Silicon MOSFETs

The EiceDRIVER™ 1EDN7116G is a single-channel gate-driver IC optimized for compatibility with CoolGaN™ HEMTs, and it is also compatible with other Schottky Gate (SG) GaN HEMTs and Silicon MOSFETs. Thanks to the truly differential input (TDI) feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, completely independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN7116G to address even high-side applications.

Summary of Features

Fully differential logic input circuitry to avoid false triggering in low-side or high-side operation
High common-mode input voltage range (CMR) up to ± 200 V for high side operation
High immunity to common-mode slew rate (100 V/ns) for robust operation during fast switching transients
Compatible with 3.3 V or 5 V input logic
Four driving strength variants to optimize switching speed without external gate resistors - up to 2 A source/sink current capability
Active bootstrap clamp to avoid bootstrap capacitor overcharging during dead-time
Active Miller clamp with 5 A sink capability to avoid induced turn-on
Adjustable charge pump for negative turn-off supply voltage
Suitable for driving GaN HEMTs or Si MOSFETs
Qualified according to JEDEC for target applications