1EDI20I12AF

Overview

1200 V, 4 A single-channel isolated gate driver with separate output and short circuit clamping

EiceDRIVER™ Compact single-channel isolated gate driver with 3.5/4 A typical sinking and sourcing peak output current in DSO-8 narrow package with 4 mm creepage distance for IGBTs, MOSFETs and SiC MOSFETs.

1EDI20I12AF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-AF family). 1EDI20I12AF offers separate sink and source output, 240 ns input filter, accurate and stable timing. The driver can operate over a wide supply voltage range, either unipolar or bipolar.

Summary of Features

  • EiceDRIVER™ Compact single channel isolated gate driver family
  • For 600 V, 650 V, 1200 V IGBTs, SiC and Si MOSFETs
  • Galvanically isolated coreless transformer gate driver
  • 4 A typical sinking and sourcing peak output current
  • 40 V absolute maximum output supply voltage
  • 300 ns propagation delay with 240 ns input filter
  • High common-mode transient immunity CMTI >100 kV/μs
  • Separate source and sink outputs
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil narrow-body package with 4 mm creepage distance
  • 10.5 V/12.7 V undervoltage lockout (UVLO) protection with hysteresis

Benefits

  • Integrated filters reduce the need of external filters
  • Suitable for operation at high ambient temperature and in fast switching applications
  • No need to adapt signal voltage levels between μController and driver
  • Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
  • Short-circuit clamping to limit the gate voltage during short circuit
Diagrams
Videos
7:03

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

1:41

Galvanic isolated Gate Drivers with Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

Training

How to choose gate driver for IGBT discretes and modules

30:25

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

29:16

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Support