1EDI20I12AF
Overview
1200 V, 4 A single-channel isolated gate driver with separate output and short circuit clamping
EiceDRIVER™ Compact single-channel isolated gate driver with 3.5/4 A typical sinking and sourcing peak output current in DSO-8 narrow package with 4 mm creepage distance for IGBTs, MOSFETs and SiC MOSFETs.
1EDI20I12AF belongs to the EiceDRIVER™ 1ED Compact 150mil family (1ED-AF family). 1EDI20I12AF offers separate sink and source output, 240 ns input filter, accurate and stable timing. The driver can operate over a wide supply voltage range, either unipolar or bipolar.
Summary of Features
- EiceDRIVER™ Compact single channel isolated gate driver family
- For 600 V, 650 V, 1200 V IGBTs, SiC and Si MOSFETs
- Galvanically isolated coreless transformer gate driver
- 4 A typical sinking and sourcing peak output current
- 40 V absolute maximum output supply voltage
- 300 ns propagation delay with 240 ns input filter
- High common-mode transient immunity CMTI >100 kV/μs
- Separate source and sink outputs
- Short-circuit clamping and active shutdown
- DSO-8 150 mil narrow-body package with 4 mm creepage distance
- 10.5 V/12.7 V undervoltage lockout (UVLO) protection with hysteresis
Benefits
- Integrated filters reduce the need of external filters
- Suitable for operation at high ambient temperature and in fast switching applications
- No need to adapt signal voltage levels between μController and driver
- Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power
- Short-circuit clamping to limit the gate voltage during short circuit
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