1EDI20I12AF

Overview

1200 V single high-side gate driver IC with galvanic isolation, short circuit clamping and separate sink/source outputs

EiceDRIVER™ Compact - High voltage, high speed IGBT driver with CT technology.

Summary of Features

  • Separate source/sink output (Vsupply: 35V)
  • Iout: 2A @ 15V
  • 1200V Coreless Transformer IC with galvanic isolation
  • 300ns prop del. with 240ns ft
  • High CMTI robustness >100kV/µs
  • Separate source/sink output
  • Small package DSO-8 150mil

Potential Applications

Please also find our specially designed Evaluation Boards (EVAL-1EDI60I12AF) for 1200V single channel coreless transformer isolated gate driver ICs in half bridge configuration (EiceDRIVER™ Compact)

Diagrams
Tools & Software
Videos
7:03

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

1:41

Galvanic isolated Gate Drivers with Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

Training
29:16

How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

30:25

How to choose gate driver for IGBT discretes and modules

With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

Support