1ED3145MC12H 5.7 kV single-channel gate driver IC with reinforced isolation, 6.5 A output current, adjustable UVLO

Overview

EiceDRIVER™ Compact single-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in 8-pin LDSO wide body package for IGBTs, MOSFETs and SiC MOSFETs.

Summary of Features

  • For up to 2300 V IGBT, Si & SiC switches
  • 2300 V funct. offset volt. capable
  • Galv. isolated coreless transformer
  • Up to 6.5 A typical peak output current
  • 40 ns propagation delay
  • 35 V abs. max. output supply voltage
  • High CMTI > 300 kV/µs
  • Active shutdown, short circuit clamping
  • 3.3 V and 5 V input supply voltage
  • Adjustable UVLO

Benefits

  • 8 mm in.-to-out. creepage & clearance
  • 7 ns max part-to-part prop. delay skew
  • CTI 600 package
  • Overtemperature protection
  • IEC 60747-17 (planned), UL 1577
  • VIORM = 1767 V (peak, reinforced)
  • VISO = 6.84 kV (rms) for 1 second
  • VISO = 5.7 kV (rms) for 1 min

Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.

Learn more about the transformer driver ICs

Diagrams
Training

Curious to learn more about how to make your gate driver designs simpler? Join us in this training where we will show you what to consider when selecting the gate driver for your application, go through the drive circuit step by step design, provide an outline of design considerations, while also taking the schematic and layout aspects into consideration!

Isolated gate drivers designed to drive the gates of power semiconductor devices. This training video will introduce the new EiceDRIVER™​ X3 Compact 1ED314x family (single-channel) as well as the 2ED314x family (dual-channel) galvanically isolated gate drivers.

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