Gallium Nitride (GaN)
CoolGaN™ - the new power paradigm. Ultimate efficiency and reliability.
Gallium nitride (GaN) offers fundamental advantages over silicon. In particular the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching.
Enjoy design simplicity with our single-channel isolated GaN EiceDRIVER™ ICs, developed for efficient performances of high voltage CoolGaN™ 600V switches and shortened time-to-market with a broad offering of GaN evaluation boards.
Infineon’s high performance CoolGaN™ e-mode HEMTs are available in top- as well as bottom-side cooled SMD packages allowing for highest efficiency and power density as well as best thermal performance in the respective applications.
Gallium nitride CoolGaN™ e-mode HEMTs in the applications
Infineon's gallium nitride CoolGaN™ family adds significant value to a broad variety of systems across many applications. These e-mode HEMTs target consumer and industrial applications such as server, datacom, telecom, adapter/charger, wireless charging and audio with the most robust and performing concept in the market.
By implementing gallium nitride CoolGaN™ e-mode HEMTs in a totem pole PFC combined with a LLC DC-DC stage, >98.5% system efficiency can be achieved (for 48V output voltage systems) providing a total of 2 billion kWh annual savings for US data centers (~ 300 million USD annual savings @ 0.15 USD/kWh).
GaN based SMPS solutions enable more compute power per rack by pushing the power density to >80W/in3 from today’s typical ~30..40 W/in3 of silicon based solutions.
Operating expense (OPEX) and capital expenditure (CAPEX) savings, overall reduction of power supply footprint and highest solution robustness have been and will remain in the focus of telecommunication infrastructure development. Infineon’s gallium nitride CoolGaN™ solution addresses these challenges by providing benchmark efficiency in the entire operation range, maximizing power density while following Infineon’s stringent qualification regime.
Adapter and charger
Infineon’s CoolGaN™ is a breakthrough for adapter and charger systems, enabling ~20W/in3 power density (for 65W maximum output power). This advantage can be realized by implementing CoolGaN™ in a half-bridge topology that enables increased switching frequency and efficiency simultaneously.
Gallium Nitride CoolGaN™ emode HEMTs enable optimal tuning in class E amplifiers especially above 30W, and offers major advantages over silicon in 6.78MHz wireless charging.
- Low almost linear COSS without large increase at low VDS enables ZVS operation over wide load impedance range
- Very low QG compared to equivalent silicon MOSFET
- 5V gate drive, very low gate drive losses
- Robust devices – self clamping gate instead of Schottky gate structure
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Class D audio amplifier
Infineon’s CoolGaN™ technology allows approaching the theoretical ideal performance of class D audio amplifiers. Due to its unique characteristics, perfectly suited for this application: zero reverse recovery charge (QRR) of the body diode, linear input and output capacitances, and extremely fast switching speeds (lowest QGD and RG) result in ideal switching waveforms, close to an ideal switch. These ideal switching waveforms are the prerequisite to maximize audio performance and minimize power losses in class D audio amplifier.
Gallium nitride CoolGaN™ 400V e-mode HEMTs are in development, coming soon.