Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant
Lead-free

S25FL127SABNFB103

END OF LIFE
Data Sheet
package
software
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S25FL127SABNFB103
S25FL127SABNFB103
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Data Sheet

Product details

  • Classification
    ISO 26262-ready
  • Density
    128 MBit
  • Family
    FL-S
  • Interface Bandwidth
    54 MByte/s
  • Interface Frequency (SDR/DDR) (MHz)
    108 / -
  • Interfaces
    Quad SPI
  • Lead Ball Finish
    Matte Tin Plating
  • Operating Temperature
    -40 °C to 105 °C
  • Operating Voltage
    3 V
  • Peak Reflow Temp
    260 °C
  • Qualification
    Automotive
OPN
S25FL127SABNFB103
Product Status discontinued
Infineon Package
PG-WSON-8
Package Name DFN-8 (002-18755)
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
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Product Status discontinued
Infineon Package
PG-WSON-8
Package Name DFN-8 (002-18755)
Packing Size 4000
Packing Type TAPE & REEL
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
View replacement
The S25FL127SABNFB103 is a 128 Mb SPI multi-I/O flash memory using MIRRORBIT™ technology and Eclipse architecture for enhanced program and erase performance. It supports normal, fast, dual, and quad read modes, with quad read speeds up to 54 MBps at 108 MHz. Operating from 2.7 V to 3.6 V and -40°C to +125°C, it offers 100,000 program-erase cycles per sector and 20-year data retention. Security features include a 1024-byte OTP region. Ideal for embedded storage.

Features

  • CMOS 3.0 V core
  • 128 Mb (16 MB) density
  • SPI with multi-I/O support
  • 24- or 32-bit address options
  • Read commands: Normal, Fast, Dual, Quad
  • AutoBoot for automatic read on power-up/reset
  • 256- or 512-byte page programming buffer
  • Internal ECC with single bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector
  • 20 year data retention
  • 1024-byte one-time programmable (OTP) array

Benefits

  • Low voltage operation reduces power use
  • High density enables large code/data storage
  • Flexible SPI I/O boosts system compatibility
  • Extended addressing supports large designs
  • Multiple read modes optimize speed
  • AutoBoot accelerates system startup
  • Large buffers speed up programming
  • ECC improves data reliability
  • Flexible erase options fit various needs
  • High endurance lowers maintenance cost
  • Long retention ensures data safety
  • OTP region adds secure storage

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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