S25FL127SABNFB103

S25FL127SABNFB103

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S25FL127SABNFB103
S25FL127SABNFB103


Product details


OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
The S25FL127SABNFB103 is a 128 Mb SPI multi-I/O flash memory using MIRRORBIT™ technology and Eclipse architecture for enhanced program and erase performance. It supports normal, fast, dual, and quad read modes, with quad read speeds up to 54 MBps at 108 MHz. Operating from 2.7 V to 3.6 V and -40°C to +125°C, it offers 100,000 program-erase cycles per sector and 20-year data retention. Security features include a 1024-byte OTP region. Ideal for embedded storage.

Features

  • CMOS 3.0 V core
  • 128 Mb (16 MB) density
  • SPI with multi-I/O support
  • 24- or 32-bit address options
  • Read commands: Normal, Fast, Dual, Quad
  • AutoBoot for automatic read on power-up/reset
  • 256- or 512-byte page programming buffer
  • Internal ECC with single bit error correction
  • Hybrid and uniform sector erase options
  • 100,000 program-erase cycles per sector
  • 20 year data retention
  • 1024-byte one-time programmable (OTP) array

Benefits

  • Low voltage operation reduces power use
  • High density enables large code/data storage
  • Flexible SPI I/O boosts system compatibility
  • Extended addressing supports large designs
  • Multiple read modes optimize speed
  • AutoBoot accelerates system startup
  • Large buffers speed up programming
  • ECC improves data reliability
  • Flexible erase options fit various needs
  • High endurance lowers maintenance cost
  • Long retention ensures data safety
  • OTP region adds secure storage

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Design resources

Developer community