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JANSR2N7616UBN

Data Sheet
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JANSR2N7616UBN
JANSR2N7616UBN
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    Z
  • ESD Class
    Class 0
  • Generation
    R7
  • ID (@100°C) max
    0.5 A
  • ID (@25°C) max
    0.8 A
  • Language
    SPICE, SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    UB
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    3.6 nC
  • QPL Part Number
    2N7616UB
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    680 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V, 100 V
Recommended
OPN
Product Status active and preferred
Infineon Package
C-LCC-3
Package Name LCC-3- Metal lid
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
C-LCC-3
Package Name LCC-3- Metal lid
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
JANSR2N7616UBN MOSFET is a single N-channel device with a 60V/0.8A rating and a UB package. It offers radiation hardness up to 100krad(Si) TID and QPL classification, with single event gate rupture and burnout immunity. This R7 MOSFET is ideal for interfacing with CMOS and TTL control circuits in radiation environments, and can be used to increase output current from a 3.3-5V source.

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