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JANSF2N7470T1

Data Sheet
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JANSF2N7470T1
JANSF2N7470T1
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    45 A
  • ID (@25°C) max
    45 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    150 nC
  • QPL Part Number
    2N7470T1
  • Qualification
    DLA
  • RDS (on) (@25°C) max
    6 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
The JANSF2N7470T1 R5 N-channel MOSFET is a radiation-hardened device designed for space applications. It has a high voltage rating of 60V and a current rating of 45A. The low RDS(on) and low gate charge make it ideal for DC-DC converters and motor control. The device also features electrical performance up to 300krad(Si) TID and has been characterized for Single Event Effects (SEE).

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