IRLSL3036

60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Data Sheet

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IRLSL3036
IRLSL3036
Data Sheet

Product details

  • ID (@25°C) max
    270 A
  • Mounting
    THT
  • Package
    I2PAK (TO-262)
  • Polarity
    N
  • Ptot max
    380 W
  • Qgd
    51 nC
  • QG (typ @4.5V)
    91 nC
  • RDS (on) (@10V) max
    2.4 mΩ
  • RDS (on) (@4.5V) max
    2.8 mΩ
  • RthJC max
    0.4 K/W
  • Tj max
    175 °C
  • VDS max
    60 V
  • VGS(th)
    1.75 V
  • VGS max
    16 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Logic level : Optimized for 10V gate-drive voltage (called Normal level), and capable of being driven at 4.5V gate-drive voltage
  • Industry standard through-hole power package
  • High-current carrying capability package (up to 195A, die-size dependent)
  • Capable of being wave-soldered

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Documents

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