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IRHNS9A93260

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IRHNS9A93260
IRHNS9A93260

Product details

  • Die Size
    6
  • ESD Class
    3B
  • Generation
    R9
  • ID (@25°C) max
    -62 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SupIR-SMD
  • Polarity
    P
  • QG
    230 nC
  • QPL Part Number
    2N7666U2A
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    32 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    -200 V
  • VF max
    -1.3 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNS9A93260 P-channel MOSFET is rad hard, with -200V and -62A, in a single SupIR-SMD package with electrical performance up to 300krad(Si) TID. IR HiRel R9 technology provides proven flight-heritage in high reliability space applications. The device's low RDS(on) and low gate charge make it ideal for switching applications.

Applications

Documents

Design resources

Developer community

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