IRHNS9A3064
Active and preferred

IRHNS9A3064

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IRHNS9A3064
IRHNS9A3064


Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R9
  • ID (@100°C) max
    100 A
  • ID (@25°C) max
    100 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SupIR-SMD
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    194 nC
  • QPL Part Number
    2N7652U2A
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    4 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V

OPN
Product Status active and preferred
Infineon Package
Package Name SUPIR SMD
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No

Product Status
Active
Infineon Package
Package Name SUPIR SMD
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
TheIRHNS9A3064 R9 N-channel MOSFET is a rad hard device in a SupIR-SMD package, with 60V and 100A capabilities. It's a COTS device and offers electrical performance up to 300krad(Si) TID, ideal for space applications. It features low RDS(on) and faster switching times, reducing power losses and increasing power density. The MOSFET also provides voltage control, fast switching, and temperature stability of electrical parameters.

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