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IRHNS9A3064

Data Sheet
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IRHNS9A3064
IRHNS9A3064
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R9
  • ID (@100°C) max
    100 A
  • ID (@25°C) max
    100 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SupIR-SMD
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    194 nC
  • QPL Part Number
    2N7652U2A
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    4 mΩ
  • SEE
    Yes
  • TID max
    300 Krad(Si)
  • VBRDSS
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
TheIRHNS9A3064 R9 N-channel MOSFET is a rad hard device in a SupIR-SMD package, with 60V and 100A capabilities. It's a COTS device and offers electrical performance up to 300krad(Si) TID, ideal for space applications. It features low RDS(on) and faster switching times, reducing power losses and increasing power density. The MOSFET also provides voltage control, fast switching, and temperature stability of electrical parameters.

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