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IRHNS57160

Data Sheet
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IRHNS57160
IRHNS57160
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    69 A
  • ID (@25°C) max
    75 A
  • Optional TID Rating (kRad(si))
    100 300 500
  • Package
    SupIR-SMD
  • Polarity
    N
  • QG
    160 nC
  • QPL Part Number
    2N7469U2A
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    12 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHNS57160 R5 MOSFET is a rad hard device ideal for space applications. With a 100V, 75A capacity and SupIR-SMD package, it has low RDS(on) and gate charge, reducing power losses in high-speed switching. Proven SEE up to an LET of 80MeV·cm2/mg and COTS classified. Retains MOSFET advantages such as voltage control, fast switching, and ease of paralleling.

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