IRHNJ57230SESCS

Data Sheet

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IRHNJ57230SESCS
IRHNJ57230SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1A
  • Generation
    R5
  • ID (@100°C) max
    7.8 A
  • ID (@25°C) max
    12 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100
  • Package
    SMD-0.5
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    35 nC
  • QPL Part Number
    2N7486U3
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    220 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS min
    200 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
This R5 device is a single N-channel MOSFET designed for space applications with rad hard capabilities. IRHNJ57230SESCS has a maximum voltage of 200V and a current capacity of 12A, along with low RDS(on) and low gate charge for minimized power losses in switching applications. This device also retains all the usual advantages of MOSFETs, with a QIRL classification.

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