IRHNA6S7160SCSD

Data Sheet

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IRHNA6S7160SCSD
IRHNA6S7160SCSD
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    56 A
  • ID (@25°C) max
    56 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    SMD-2
  • Polarity
    N
  • QG
    170 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    10 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
This R6 rad hard N-channel MOSFET comes in a SMD-2 package and on DBC carrier. With 100V and 56A capacity, it offers electrical performance up to 100krad(Si) TID. Ideal for space applications, IRHNA6S7160SCSD has low RDS(on) and gate charge, reducing power losses in switching applications such as DC-DC converters and motor controllers. Voltage control, fast switching, and temperature stability make this MOSFET ideal for any high-performance application.

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