IRHMS57163SESCS

Data Sheet

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IRHMS57163SESCS
IRHMS57163SESCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3B
  • Generation
    R5
  • ID (@100°C) max
    45 A
  • ID (@25°C) max
    45 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    160 C
  • QPL Part Number
    2N7475T1
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    14.5 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS min
    130 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHMS57163SESCS R5 N-channel MOSFET is a space-grade device with a rad hard design, 130V voltage rating, and 45A current rating. It comes in a TO-254AA low ohmic package and offers electrical performance up to 100krad(Si) TID and QIRL classification. This MOSFET features low RDS(on) and gate charge, reducing power losses in switching applications.

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