IRHMB6S7260SCS

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IRHMB6S7260SCS
IRHMB6S7260SCS

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    35 A
  • ID (@25°C) max
    45 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-254AA Tabless Low Ohmic
  • Polarity
    N
  • QG
    240 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    29 mΩ
  • SEE
    100 MeV∙cm2/mg
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHMB6S7260SCS R6 N-channel MOSFET is a space-grade device with 200V/35A capacity. Its TO-254AA tabless low ohmic package provides electrical performance up to 100krad(Si) TID, QIRL classification. Its low RDS(on) and gate charge reduce power losses in DC-DC converters and motor controllers. This MOSFET provides voltage control, fast switching, and temperature stability.

Applications

Documents

Design resources

Developer community

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