IRFMG50SCX

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IRFMG50SCX
IRFMG50SCX

Product details

  • Configuration
    Discrete
  • ID (@100°C) max
    3.5 A
  • ID (@25°C) max
    5.6 A
  • Package
    TO-254AA
  • Polarity
    N
  • RDS (on) (@25°C) max
    2000 mΩ
  • VBRDSS min
    1000 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRFMG50SCX is a high reliability, 1000V, single, N-channel MOSFET in a TO-254AA package. It utilizes HEXFET MOSFET technology to achieve low on-state resistance, high transconductance, and superior reverse energy and diode recovery dv/dt capability. Ideal for power supplies, motor controls, choppers, audio amplifiers, and other high-energy pulse circuit applications. It has TX level screening and is suitable for defense applications.

Applications

Documents

Design resources

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }