IRF7910

12V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Data Sheet

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IRF7910
IRF7910
Data Sheet

Product details

  • ID (@ TA=25°C) max
    10 A, 10 A
  • ID (@ TA=70°C) max
    7.9 A, 7.9 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    5.2 nC
  • QG
    17 nC
  • RDS (on) (@4.5V) max
    15 mΩ
  • RDS (on) (@2.7V) max
    50 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    12 V
  • VGS max
    12 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Fully Characterized Avalanche Voltage and Current
  • Low Gate-to-Drain Charge to Reduce Switching Losses
  • Fully Characterized Capacitance Including Effective Coss to Simplify Design
  • Dual N-Channel MOSFET

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Documents

Documents

Design resources

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