IRF6802SD

A 25V Dual N-Channel HEXFET Power MOSFET in a DirectFET SA package rated at 16 amperes optimized with low on resistance.
Data Sheet

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IRF6802SD
IRF6802SD
Data Sheet

Product details

  • ID (@25°C) max
    57 A
  • Micro-stencil
    IRF66SA-25
  • Moisture Sensitivity Level
    1
  • Package
    DirectFET SA
  • Polarity
    N+N, N+N
  • Ptot (@ TA=25°C) max
    1.7 W
  • Qgd (typ)
    3.1 nC
  • QG (typ @4.5V)
    8.8 nC
  • RDS (on) (@10V) max
    4.2 mΩ
  • RDS (on) (@4.5V) max
    5.9 mΩ
  • RthJA max
    72 K/W
  • Tj max
    150 °C
  • VDS max
    25 V
  • VGS(th)
    1.6 V
  • VGS max
    16 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • 100% Rg tested
  • Dual N-Channel MOSFET
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Optimized for Control FET Applications
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }