IRF6798M

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 37 amperes optimized with low on resistance.
Data Sheet

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IRF6798M
IRF6798M
Data Sheet

Product details

  • ID (@ TA=70°C) max
    30 A
  • ID (@ TC=25°C) max
    197 A
  • ID (@ TA=25°C) max
    37 A
  • Micro-stencil
    IRF66MX-25
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    DirectFET MX
  • Polarity
    N with Schottky
  • Ptot (@ TA=25°C) max
    2.8 W
  • Ptot max
    78 W
  • Qgd
    16 nC
  • QG
    50 nC
  • RDS (on) (@10V) max
    1.3 mΩ
  • RDS (on) (@4.5V) max
    2.1 mΩ
  • RDS (on) max
    1.3 mΩ
  • RthJC max
    1.6 K/W
  • Tj max
    150 °C
  • VDS max
    25 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • 100% Rg tested
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
  • Integrated Monolithic Sckottky Diode

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Documents

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