Active and preferred
RoHS Compliant

IKB06N60T

600 V, 6 A IGBT Discrete with anti-parallel diode in TO263 package
Data Sheet
package
ea.
in stock

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IKB06N60T
IKB06N60T
ea.
Data Sheet

Product details

  • Eoff (Hard Switching)
    0.11 mJ
  • Eon
    0.09 mJ
  • IC (@ 100°) max
    6 A
  • IC (@ 25° ) max
    12 A
  • ICpuls max
    18 A
  • IF max
    12 A
  • IFpuls max
    18 A
  • Irrm
    5.3 A
  • Package
    D2PAK (TO-263-3)
  • Ptot max
    88 W
  • QGate
    42 nC
  • Qrr
    190 nC
  • RGint
    0 Ω
  • RG
    23 Ω
  • Soft Switching
    No
  • Switching Frequency
    2 kHz to 20 kHz
  • td(off)
    130 ns
  • td(on)
    9 ns
  • Technology
    IGBT TRENCHSTOP™
  • tf
    58 ns
  • tr
    6 ns
  • tSC
    5 µs
  • VCE(sat)
    1.5 V
  • VCE max
    600 V
  • VF
    1.6 V
Recommended
OPN
IKB06N60TATMA1
Product Status active and preferred
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead-free No
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-TO263-3
Package Name D2PAK
Packing Size 1000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
Hard-switching 600 V, 6 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Features

  • Lowest VCEsatdrop
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very softrolled Diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution

Benefits

  • Highest efficiency
  • Comprehensive portfolio
  • High device reliability
  • low conduction and switching losses

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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