Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
END OF LIFE
discontinued
RoHS Compliant

IGT60R070D1

END OF LIFE
Gallium nitride CoolGaN™ 600V e-mode power transistor IGT60R070D1 for ultimate efficiency and reliability
Data Sheet
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IGT60R070D1
IGT60R070D1
Data Sheet

Product details

  • Green
    RoHS compliant, Halogen free
  • ID (@ TA=25°C) max
    31 A
  • IDpuls (@25°C) max
    60 A
  • Language
    SPICE
  • Package
    PG-HSOF-8-3
  • Product Name
    IGT60R070D1
  • Ptot max
    125 W
  • QG
    5.8 nC
  • Qualification
    Industrial
  • RDS (on) (typ)
    55 mΩ
  • VBRDSS max
    600 V
  • VDS max
    600 V
  • VGS(th)
    1.2 V
OPN
IGT60R070D1ATMA1 IGT60R070D1ATMA4
Product Status discontinued discontinued
Infineon Package
PG-HSOF-8
PG-HSOF-8
Package Name N/A N/A
Packing Size 2000 2000
Packing Type TAPE & REEL TAPE & REEL
Moisture Level N/A 1
Moisture Packing NON DRY NON DRY
Lead-free No No
Halogen Free Yes Yes
RoHS Compliant Yes Yes
Infineon stock last updated:
View replacement

Product Status discontinued
Infineon Package
PG-HSOF-8
Package Name -
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level -
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant

Product Status discontinued
Infineon Package
PG-HSOF-8
Package Name -
Packing Size 2000
Packing Type TAPE & REEL
Moisture Level 1
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
View replacement
The IGT60R070D1 enables a more compact topology and higher efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applications.

Features

  • E-mode HEMT – normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Low dynamic RDS(on)
  • Bottom-side cooled

Benefits

  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI

Documents

Documents

Design resources

Partner solutions

Developer community

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