Active and preferred
RoHS Compliant
Lead-free

FM25V02A-G

High-Density 256kBit SPI FRAM Module | 40MHz, -40 to 85°C, Pure Sn Finish
Data Sheet
package
ea.
in stock

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FM25V02A-G
FM25V02A-G
ea.
Data Sheet

Product details

  • Density
    256 kBit
  • Frequency
    40 MHz
  • Interfaces
    SPI
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage (VCCQ) range
    2 V to 3.6 V
  • Operating Voltage range
    2 V to 3.6 V
  • Organization (X x Y)
    32Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM25V02A-G
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 1940
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 1940
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM25V02A-G is a 256-Kbit (32K × 8) serial ferroelectric RAM (F-RAM) with high-speed SPI interface up to 40 MHz. It offers 100 trillion (1014) read/write cycles and 151-year data retention at 65°C. Operating from 2.0 V to 3.6 V and -40°C to +85°C, it features immediate write persistence, advanced protection, and low power consumption. Designed for frequent writes in industrial and control applications, it is available in 8-pin SOIC and DFN packages and is RoHS compliant.

Features

  • 256-Kbit nonvolatile F-RAM memory
  • 100 trillion (10^14) read/write endurance
  • 151-year data retention at 65°C
  • NoDelay™ writes, instant at bus speed
  • Up to 40 MHz SPI clock frequency
  • Supports SPI mode 0 and mode 3
  • Hardware write protection (WP pin)
  • Software write disable instruction
  • Block protection for 1/4, 1/2, or full array
  • Device ID with manufacturer and product info
  • Low active (2.5 mA), standby (150 μA), sleep
  • Operates from 2.0 V to 3.6 V supply

Benefits

  • Reliable data even after power loss
  • Withstands frequent, rapid write cycles
  • 151-year retention ensures long-term storage
  • No write delays, faster system response
  • 40 MHz SPI enables high-speed access
  • Flexible interface for easy integration
  • Prevents accidental data overwrite
  • Software and hardware data security
  • Selective block protection for critical data
  • Device traceability and easy inventory
  • Low power modes extend battery life
  • Wide voltage range suits many systems

Documents

Documents

Design resources

Partner solutions

Developer community

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