Active and preferred
RoHS Compliant
Lead-free

FM24CL64B-G

High-Density 64 kBit I²C F-RAM Memory device | 1MHz, -40 to 85°C, Pure Sn Finish
Data Sheet
package
ea.
in stock

Content could not be loaded

Unfortunately, we were unable to load the content for this section. You may want to refresh the page or try again later.

FM24CL64B-G
FM24CL64B-G
ea.
Data Sheet

Product details

  • Density
    64 kBit
  • Frequency
    1 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    2.7 V to 3.6 V
  • Operating Voltage (VCCQ) range
    2.7 V to 3.6 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM24CL64B-G
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2910
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2910
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM24CL64B-G is a 64-Kbit automotive F-RAM with high-endurance I2C interface, supporting up to 10 trillion read/write cycles and 121-year data retention. Operating from 3.0 V to 3.6 V across –40°C to +125°C, it features NoDelay™ writes at bus speed, low power consumption, and direct hardware replacement for serial EEPROM. AEC-Q100 Grade 1 and RoHS compliant, it is ideal for data logging and industrial control applications requiring frequent writes.

Features

  • 64-Kbit ferroelectric random access memory
  • 8 K × 8 logical organization
  • 10^13 read/write cycle endurance
  • 121-year data retention at 85°C
  • NoDelay™ instant write technology
  • I2C serial interface up to 1 MHz
  • Low active current: 120 μA at 100 kHz
  • Low standby current: 6 μA at 85°C
  • VDD operation: 3.0 V to 3.6 V
  • Data integrity from –40°C to +125°C
  • Write protection pin (WP)
  • Direct hardware replacement for serial EEPROM

Benefits

  • Reliable nonvolatile storage for frequent
  • Eliminates write delays for instant updates
  • 10^13 cycles enables long product life
  • 121-year retention ensures data safety
  • Low power reduces system energy use
  • I2C up to 1 MHz enables fast communication
  • Wide temp range supports harsh environments
  • Drop-in replacement simplifies upgrades
  • Write protection prevents accidental changes
  • No data polling needed after writes
  • High endurance minimizes maintenance
  • Consistent operation across voltage range

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }