Active and preferred
RoHS Compliant
Lead-free

FM24CL64B-G

High-Density 64 kBit I²C F-RAM Memory device | 1MHz, -40 to 85°C, Pure Sn Finish
Data Sheet
package
ea.
in stock

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FM24CL64B-G
FM24CL64B-G
ea.
Data Sheet

Product details

  • Density
    64 kBit
  • Frequency
    1 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature
    -40 °C to 85 °C
  • Operating Voltage
    2.7 V to 3.6 V
  • Operating Voltage (VCCQ)
    2.7 V to 3.6 V
  • Organization (X x Y)
    8Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM24CL64B-G
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2910
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2910
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
FM24CL64B-G is a high-performance 64-Kbit nonvolatile memory utilizing advanced ferroelectric technology. With reliable data retention for 121 years and bus-speed write operations, it outperforms EEPROM, offering a substantial write endurance of 1013 cycles. Ideal for frequent or rapid writes in applications such as data logging and industrial controls, this memory provides efficient data storage with lower power consumption during writes.

Features

  • 64-Kbit F-RAM logically organized as 8 K × 8
  • High-endurance 10 trillion (1013) read/writes
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
  • Fast 2-wire Serial interface (I2C)
  • Low power consumption
  • AEC Q100 Grade 1 compliant

Documents

Documents

Design resources

Partner solutions

Developer community

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