Active and preferred
RoHS Compliant
Lead-free

FM24C04B-G

Data Sheet
package
ea.
in stock

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FM24C04B-G
FM24C04B-G
ea.
Data Sheet

Product details

  • Density
    4 kBit
  • Frequency
    1 MHz
  • Interfaces
    I2C
  • Lead Ball Finish
    Pure Sn
  • Operating Temperature range
    -40 °C to 85 °C
  • Operating Voltage range
    4.5 V to 5.5 V
  • Operating Voltage (VCCQ) range
    4.5 V to 5.5 V
  • Organization (X x Y)
    0.5Kb x 8
  • Peak Reflow Temp
    260 °C
  • Planned to be available until at least
    2033
  • Qualification
    Industrial
  • Speed
    0 ns
Recommended
OPN
FM24C04B-G
Product Status active and preferred
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2910
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
 ea. in stock

Product Status
Active
Infineon Package
PG-DSO-8
Package Name SOIC-8 (51-85066)
Packing Size 2910
Packing Type TUBE
Moisture Level 3
Moisture Packing DRY
Lead Free
Halogen Free
RoHS Compliant
ea.
in stock
The FM24C04B-G is a 4-Kbit ferroelectric random access memory (F-RAM) organized as 512 × 8 bits and accessed via I2C. It features NoDelay™ writes at bus speed, eliminating EEPROM write delays. Supporting 100 trillion (1014) read/write cycles and 151-year data retention at 65°C, it operates from 4.5 V to 5.5 V with 100 μA active current at 100 kHz and 4 μA standby. AEC-Q100 Grade 3 qualification and –40°C to +85°C range suit frequent, rapid-write applications.

Features

  • 4-Kbit (512 × 8) nonvolatile F-RAM
  • 100 trillion (1e14) read/write cycles
  • 151-year data retention at 65°C
  • NoDelay™ instant writes
  • I2C interface up to 1 MHz
  • Low active current: 100 μA at 100 kHz
  • 4 μA typical standby current
  • VDD operation: 4.5 V to 5.5 V
  • Industrial temp: –40°C to +85°C
  • Write protect pin
  • Schmitt trigger inputs for noise immunity
  • ESD protection: 2 kV HBM, 500 V CDM

Benefits

  • Enables frequent, rapid data logging
  • Eliminates write delays for faster systems
  • Reliable long-term data storage
  • Low power extends battery life
  • Drop-in replacement for I2C EEPROM
  • Operates in harsh industrial conditions
  • Protects data with write protect pin
  • Reduces risk from ESD events
  • Noise-immune inputs for robust operation
  • No polling needed after writes
  • Supports legacy and fast I2C speeds
  • High endurance lowers maintenance cost

Documents

Documents

Design resources

Partner solutions

Developer community

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