AUIRFN8458

40 V, N-Ch, 10 mΩ max, Automotive MOSFET, Dual PQFN 5mm x 6mm, Trench MOSFET
Data Sheet

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AUIRFN8458
AUIRFN8458
Data Sheet

Product details

  • ID (@25°C) max
    43 A
  • Moisture Sensitivity Level
    MSL_1
  • Operating Temperature
    -55 °C to 175 °C
  • Package
    SuperSO8 5x6
  • Polarity
    N+N
  • Qgd
    7.6 nC
  • QG (typ @10V)
    22 nC
  • QG (typ @10V) max
    33 nC
  • Qualification
    Automotive
  • RDS (on) (@10V) max
    10 mΩ
  • RDS (on) max
    10 mΩ
  • RthJA
    105 K/W
  • Technology
    Trench Mosfet
  • Tj max
    175 °C
  • VDS max
    40 V
  • VGS(th)
    2.2 V to 3.9 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
Designed for automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features include 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These attributes make it an efficient and reliable choice for automotive and various other applications.

Features

  • Advanced Process Technology
  • Dual N-Channel MOSFET
  • Ultra Low On-Resistance
  • 175°C Operating Temperature
  • Fast Switching
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS Compliant
  • Automotive Qualified
  • PPAP Capable Device

Applications

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Documents

Design resources

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }