RF Mixer + Detector Schottky Diode
Infineon RF Schottky diodes are silicon low barrier N-type devices and, unlike other solutions available in the market, they come with various junction diode configurations which can be used for very sensitive power detector circuits, in sampling circuits or in mixer circuits.
The very low barrier height and very small forward voltage, along with low junction capacitance, make this series of devices excellent choice as detector functions at frequencies as high as 24 GHz.
All Infineon RF Schottky diodes come with an integrated guard ring on-chip for overvoltage protection.
Find an answer to your question
Technical Assistance Center (TAC)
Infineon welcomes your comments and questions.
If you have any questions concerning our products, please fill out the following form. Your inquiry will be sent to the appropriate specialist who will be in touch with you as soon as possible.
You will receive a confirmation E-mail to validate your address in our system. Any attached file to the reply which will help to support your inquiry is highly appreciated.