Simplifying your design process with a package and footprint that has been a standard in the industry for many years
NEW! GaN transistors in industry-standard packages
The CoolGaN™ Transistors Medium Voltage RQFN products set a new benchmark in power systems design. They offer a first for GaN routable QFN (RQFN) package form factor that is specifically designed to be footprint-compatible with standard packages available in the market. This compatibility enables seamless integration into existing solutions, reducing the need for substantial layout changes or the creation of new board designs.
Features
E-mode normally-off transistor
Footprint compatible with common switches
80 V: 2.3 mΩ typical on resistance, 3.3x3.3 mm (IGE033S08S1)
100 V: 1.1 mΩ typical on resistance, 5x6 mm (IGD015S10S1)
High power capability
Benefits
Simplified design and layout process
Reduced development time and costs
Low-ohmic interconnect and low parasitics provide GaN performance in silicon MOSFET standard footprint
Improved thermal conductivity with increased contact area providing better heat-spreading and power dissipation
