The CoolGaN™ Transistors Medium Voltage RQFN products set a new benchmark in power systems design.
They offer a first for GaN routable QFN (RQFN) package form factor that is specifically designed to be footprint-compatible with standard packages available in the market. This compatibility enables seamless integration into existing solutions, reducing the need for substantial layout changes or the creation of new board designs.

  • E-mode normally-off transistor
  • Footprint compatible with common switches
  • 80 V: 2.3 mΩ typical on resistance, 3.3x3.3 mm (IGE033S08S1)
  • 100 V: 1.1 mΩ typical on resistance, 5x6 mm (IGD015S10S1)
  • High power capability
  • Simplified design and layout process
  • Reduced development time and costs
  • Low-ohmic interconnect and low parasitics provide GaN performance in silicon MOSFET standard footprint
  • Improved thermal conductivity with increased contact area providing better heat-spreading and power dissipation

 

  • Telecom & datacenter 48 V IBC
  • Sync rectification for AC-DC and DC-DC converters
  • Robotics
  • Multicopters and drones
  • Battery-powered tools
  • 48 V servo drive
  • E-mobility and UAVs
  • Photovoltaic
  • Renewables
  • Point of load converters
document

Short-circuit robustness of CoolGaN™ and OptiMOS™ 6 100 V transistors

Download here