FF1MR12KM1H CoolSiC™ MOSFET half bridge module 1200 V
Overview
62 mm CoolSiC™ MOSFET half bridge module 1200 V, 1.6 mΩ G1 in the well known 62mm housing combined with M1H chip technology. Also available with pre-applied Thermal Interface Material (TIM).
Summary of Features
- High current density
- Low switching losses
- Superior gate oxide reliability
- Highest robustness against humidity
- Robust integrated body diode
- High cosmic ray robustness
- High speed switching module
- Symmetrical module design
- Standard construction technique
Benefits
- Minimizes cooling efforts
- High switching frequency
- Reduced volume and size
- Reduction of system costs
Diagrams
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