IRGB4056D
Overview
600 V, 12 A IGBT with anti-parallel diode in TO-220AB package
UltraFast 600 V, 12 A IGBT with anti-parallel diode in TO-220AB package.
Summary of Features
- Low VCE (ON)
- Trench IGBT Technology
- Low switching losses
- Maximum Junction temperature 175 °C
- 5 µS short circuit SOA
- Square RBSOA
- 100% of the parts tested for 4X rated current (ILM)
- Positive VCE (ON) Temperature co-efficient
- Ultra fast soft Recovery Co-Pak Diode
- Tight parameter distribution
- Lead Free Package
Benefits
- High Efficiency in a wide range of applications
- Suitable for a wide range of switching frequencies due to Low VCE (ON) and Low Switching losses
- Rugged transient Performance for increased reliability
- Excellent Current sharing in parallel operation
- Low EMI
Potential Applications
Diagrams
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