EiceDRIVER™ SiC MOSFET Gate Driver ICs

Overview

Gate-Driver ICs with perfect fit to CoolSiC™ MOSFET

Ultra-fast switching 650 V and 1200 V power transistors such as CoolSiC™ MOSFETs typically are best driven by gate-driver ICs with integrated galvanic isolation.

These gate drivers incorporate the most important key features and parameters typically recommended for silicon-carbide MOSFETs driving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, extended CMTI capability, active Miller clamp, DESAT protection, UVLO, and last but not least input-to-output galvanic isolation.

In SiC MOSFET half-bridges, where the 3.3 mm channel-to-channel creepage distance between the two output channels of a dual-channel isolated gate-driver IC is insufficient, a hybrid combination consisting of one single-channel isolated gate-driver IC for the boot-strapped high-side, and one non-isolated gate-driver IC with truly differential inputs can be a compelling choice. This combination permits optimization of the gate-loop layout and offers separate low-impedance source and sink outputs. 

For a larger selection of galvanically isolated gate drivers, please find the complete list of our EiceDRIVER™ galvanically isolated gate driver ICs.

Products
Highlights

For a larger selection of isolated gate drivers, refer to the product portfolio overview section of our EiceDRIVER™ gate driver selection guide. These drivers incorporate most important key features and parameters for CoolSiC™ MOSFETsdriving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, extended CMTI capability, active Miller clamp, and DESAT protection.

Features Applications
  • Up to 2300 V input-to-output isolation voltage
  • Up to 14 A typical peak rail-to-rail output
  • Up to 40 V absolute max. output voltage
  • 90 ns propagation delay with 30 ns input filter
  • Highest CMTI >300 kV/μs
  • Adjustable DESAT, Miller clamp and Soft-off
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil package with 4 mm creepage and DSO-8 300 mil package with 8 mm creepage
  • UL 1577 certified VISO = 5.7 kV (rms) for 1 min and VDE 0884-11 certified (reinforced isolation) VIORM = 1767 V
  • I2C configurability for highest flexibility during design-in

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Recommended documents

Videos

Galvanic isolated Gate Drivers with advanced Protection Features

EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

Gate Driver Solutions - Why Infineon is the best Partner

Tailored Gate Driver Solutions by Infineon, This video explains why gate driver ICs are well suited for many applications such as Automotive, Major Home Appliances, Industrial Motor Drives, Solar Inverters, UPS, Switched-Mode Power Supplies, and High-Voltage Lighting.

An Introduction to Infineon Gate Drivers

What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

Training
  • The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc

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  • The EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
  • Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS

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  • The new EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

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Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

Watch now

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