EiceDRIVER™ SiC MOSFET Gate Driver ICs

Overview

Gate-Driver ICs with perfect fit to CoolSiC™ MOSFET

Ultra-fast switching 650 V and 1200 V power transistors such as CoolSiC™ MOSFETs typically are best driven by gate-driver ICs with integrated galvanic isolation.

These gate drivers incorporate the most important key features and parameters typically recommended for silicon-carbide MOSFETs driving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, extended CMTI capability, active Miller clamp, DESAT protection, UVLO, and last but not least input-to-output galvanic isolation.

In SiC MOSFET half-bridges, where the 3.3 mm channel-to-channel creepage distance between the two output channels of a dual-channel isolated gate-driver IC is insufficient, a hybrid combination consisting of one single-channel isolated gate-driver IC for the boot-strapped high-side, and one non-isolated gate-driver IC with truly differential inputs can be a compelling choice. This combination permits optimization of the gate-loop layout and offers separate low-impedance source and sink outputs. 

For a larger selection of galvanically isolated gate drivers, please find the complete list of our EiceDRIVER™ galvanically isolated gate driver ICs.

Products
Highlights

For a larger selection of isolated gate drivers, refer to the product portfolio overview section of our EiceDRIVER™ gate driver selection guide. These drivers incorporate most important key features and parameters for CoolSiC™ MOSFETsdriving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, extended CMTI capability, active Miller clamp, and DESAT protection.

Features Applications
  • Available in wide body package with 8 mm creepage distance
  • Suitable for operation at high ambient temperature
  • Active Miller clamp
  • Short circuit clamping and active shutdown
  • ≥ 100 kV/μs CMTI (1EDU20I12SV: ≥ 50 kV/μs CMTI )
  • Precision DESAT protection
  • 12 V/ 11 V typical UVLO thresholds

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Videos

Galvanic isolated Gate Drivers with advanced Protection Features

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EiceDRIVER™ galvanically isolated gate drivers use the unique coreless transformer (CT) technology to provide signal transfer across the galvanic isolation. We offer short circuit protection, 100 kV/μs CMTI, active Miller clamp, soft turn off and other features, especially for driving SiC MOSFETs and GaN HEMTs.

Gate Driver Solutions - Why Infineon is the best Partner

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Tailored Gate Driver Solutions by Infineon, This video explains why gate driver ICs are well suited for many applications such as Automotive, Major Home Appliances, Industrial Motor Drives, Solar Inverters, UPS, Switched-Mode Power Supplies, and High-Voltage Lighting.

An Introduction to Infineon Gate Drivers

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What is a gate driver? Why use a gate driver? How to use a gate driver? Watch our introduction video and become a gate driver expert.

Training
How to choose gate driver for SiC MOSFETs and SiC MOSFET modules

Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ Enhanced now include 1ED34XX (X3 Analog), with DESAT(adjustable filter time), soft-off(adjustable current)
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, etc.

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