EiceDRIVER™ SiC MOSFET Gate Driver ICs

Overview

Gate-Driver ICs with perfect fit to CoolSiC™ MOSFET

Ultra-fast switching 650 V and 1200 V power transistors such as CoolSiC™ MOSFETs typically are best driven by gate-driver ICs with integrated galvanic isolation.

These gate drivers incorporate the most important key features and parameters typically recommended for silicon-carbide MOSFETs driving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, extended CMTI capability, active Miller clamp, DESAT protection, UVLO, and last but not least input-to-output galvanic isolation.

In SiC MOSFET half-bridges, where the 3.3 mm channel-to-channel creepage distance between the two output channels of a dual-channel isolated gate-driver IC is insufficient, a hybrid combination consisting of one single-channel isolated gate-driver IC for the boot-strapped high-side, and one non-isolated gate-driver IC with truly differential inputs can be a compelling choice. This combination permits optimization of the gate-loop layout and offers separate low-impedance source and sink outputs. 

For a larger selection of galvanically isolated gate drivers, please find the complete list of our EiceDRIVER™ galvanically isolated gate driver ICs.

Products
Highlights

For a larger selection of isolated gate drivers, refer to the product portfolio overview section of our EiceDRIVER™ gate driver selection guide. These drivers incorporate most important key features and parameters for CoolSiC™ MOSFETsdriving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, extended CMTI capability, active Miller clamp, and DESAT protection.

Features Applications
  • Up to 2300 V input-to-output isolation voltage
  • Up to 14 A typical peak rail-to-rail output
  • Up to 40 V absolute max. output voltage
  • 90 ns propagation delay with 30 ns input filter
  • Highest CMTI >300 kV/μs
  • Adjustable DESAT, Miller clamp and Soft-off
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil package with 4 mm creepage and DSO-8 300 mil package with 8 mm creepage
  • UL 1577 certified VISO = 5.7 kV (rms) for 1 min and VDE 0884-11 certified (reinforced isolation) VIORM = 1767 V
  • I2C configurability for highest flexibility during design-in

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Videos
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Training
  • The EiceDRIVER™ Enhanced X3 Analog family (1ED34xx), with DESAT (adjustable filter time), Miller Clamp, soft-off (adjustable current)
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc

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  • The EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
  • Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS

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  • The new EiceDRIVER™ X3 Digital family (1ED38xx), with I2C-configurability for DESAT, Soft-Off, UVLO, Miller clamp, two level turn off (TLTO).
  • Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

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Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

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Webinars

Servo drives come handy in a lot of applications, but controlling them and the power needed to drive them can be challenging when attempting to do it efficiently. Similarly, handling overload and short-circuit conditions is critical. Through this webinar, we will demonstrate best practices of protecting them and how to ensure the protection is reliable, robust and sufficiently fast for all operations. We will also give an exciting overview of suitable boards for evaluation and show the comprehensive Infineon portfolio of SiC MOSFETs and gate driver solutions.

Key Takeaways

  1. Understand how Infineon responds to the trends in the industry drives market: e.g. inverter integration with SiC MOSFETs and get an overview of some of the solutions offered
  2. Learn how to enable lower switching losses compare to IGBTs at same dV/dt levels and enhanced switching control
  3. Explore how to avoid the main pitfalls when driving SiC MOSFETs
  4. Discover how to reliably protect SiC MOSFETs using EiceDRIVER™ gate drivers
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