EiceDRIVER™ SiC MOSFET Gate Driver ICs
Gate-Driver ICs with perfect fit to CoolSiC™ MOSFET
Ultra-fast switching 650 V and 1200 V power transistors such as CoolSiC™ MOSFETs typically are best driven by gate-driver ICs with integrated galvanic isolation.
These gate drivers incorporate the most important key features and parameters typically recommended for silicon-carbide MOSFETs driving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, extended CMTI capability, active Miller clamp, DESAT protection, UVLO, and last but not least input-to-output galvanic isolation.
In SiC MOSFET half-bridges, where the 3.3 mm channel-to-channel creepage distance between the two output channels of a dual-channel isolated gate-driver IC is insufficient, a hybrid combination consisting of one single-channel isolated gate-driver IC for the boot-strapped high-side, and one non-isolated gate-driver IC with truly differential inputs can be a compelling choice. This combination permits optimization of the gate-loop layout and offers separate low-impedance source and sink outputs.
For a larger selection of galvanically isolated gate drivers, please find the complete list of our EiceDRIVER™ galvanically isolated gate driver ICs.
For a larger selection of isolated gate drivers, refer to the product portfolio overview section of our EiceDRIVER™ gate driver selection guide. These drivers incorporate most important key features and parameters for CoolSiC™ MOSFETsdriving such as tight propagation delay matching, precise input filters, wide output-side supply range, negative gate voltage capability, extended CMTI capability, active Miller clamp, and DESAT protection.
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Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ Enhanced now include 1ED34XX (X3 Analog), with DESAT(adjustable filter time), soft-off(adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, etc.
