EiceDRIVER™ Enhanced isolated gate driver IC
Galvanically isolated single-channel and dual-channel gate driver ICs with DESAT, Miller clamp, soft-off for MOSFETs, IGBTs, IGBT modules, and SiC MOSFETs
The EiceDRIVER™ 1ED020I12-F2/B2 Enhanced gate driver ICs are galvanic isolated single channel IGBT and SiC MOSFET drivers in DSO-16 package that provide output current capabilities of typically 2 A. The precision DESAT function is an excellent solution for SiC MOSFET short-circuit protection. 2ED020I12-F2 (2ED-F2) is the dual-channel version of 1ED020I12-F2 (1ED-F2) in DSO-36 package.
2ED020I12-FI (2ED-FI) is a high voltage, high speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. 2ED-FI integrate a general purpose operational amplifier and general purpose comparator, which can be implemented as over current protection (OCP).
By combining EiceDRIVER™ with super-junction MOSFETs such as CoolMOS™, IGBTs, Silicon Carbide (SiC) MOSFET such as CoolSiC™, and IGBT modules, Infineon enables customers to achieve their design goals.
These galvanically isolated drivers are based on our coreless transformer technology, enabling a world class common mode transient immunity of 100 kV/μs. They are ideal for MOSFET, IGBT and SiC MOSFET based applications such as photovoltaic string inverters, charge stations for electric vehicles, industrial drives, welding equipment, induction heating appliances, and power supplies for servers and telecommunication systems. The optimized pin out simplifies the PCB design for low impedance power supply. All drivers are offered in a halogen-free and RoHS compliant wide-body package with a creepage distance of 8 mm.
|Main benefits||Key features||Applications|
This might also be of interest for you
With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
Silicon Carbide MOSFETs bring a lot of opportunities to power electronics. However, how to achieve sufficient system benefits by using Silicon Carbide MOSFETs with suitable gate drivers? This training helps you to learn how to calculate a reference gate resistance value for your Silicon Carbide MOSFET; how to identify suitable gate driving ICs based on peak current and power dissipation requirements; and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.
- EiceDRIVER™ Enhanced now include 1ED34XX (X3 Analog), with DESAT(adjustable filter time), soft-off(adjustable current)
- Up to 9 A output current, 200 kV/µs CMTI, 30 ns Max. propagation delay matching, 40 V Max output supply voltage.
- Perfect for CoolSiC™ SiC MOSFET. VDE 0884-11 & UL 1577 (planned). For solar, EV charging, industrial drive, UPS, etc.