IDFW80C65D1
Overview
650 V silicon power diode in TO-247 advanced isolation package
Rapid 1 switching 650 V, 80 A emitter controlled silicon power diode in a TO-247 advanced isolation package for a best cost efficient solution.
Summary of Features
- 650V Emitter Controlled technology
- Temperature stable behaviour of key parameters
- Low forward voltage (VF)
- Low reverse recovery charge (Qrr)
- Low reverse recovery current (Irrm)
- Maximum junction temperature 175°C
- 2500 VRMS electrical isolation, 50/60 Hz, t = 1 min
- 100 % tested isolated mounting surface
- Pb-free lead plating
- RoHS compliant
Diagrams
Support