Wind power

Energy-efficient components and subsystems for high system reliability

Overview

Modern wind turbines generate electricity by controlling a generator with power electronics. The generator can be either a DFIG or PMSG. Power electronics are required to control power flow, fulfill grid requirements and extract power at variable wind speeds. Reliable converters are essential for long lifetimes and low operating costs. Infineon has a wide range of power modules to suit the challenging requirements of wind turbines.

Benefits

  • Wind turbine power module expertise
  • Modules for DFIG & full converters
  • Long lifetimes with .XT technology
  • Modules for grid compatible converters
  • High efficiency with CoolSiC™
  • 2300 V voltage class for higher power
  • Standard PrimePACK™ & EconoDUAL™
  • Open-liquid cooling in EconoDUAL™

Block diagram

About

Long lifetime with .XT interconnect technology

The .XT connection technology was developed in performance modules for demanding and long-life applications, such as wind turbine converters or drive converters in traction applications and electrified trucks.

.XT for modules is characterized by improved wire bonding, reliable chip attachment enabled by sintering, and high-reliability system-soldering. These combined improvements of the interconnection eliminate the typical wear-and-tear out mechanisms, like fatigue of the bond wire and soldered chip connection that occur during cycling loads in the applications.

To fulfill application requirements, high voltage modules like the 3.3 kV XHP™ 3 can now support an increased power cycling robustness of a factor greater than 5. Low-voltage modules like the 1.2 kV and 1.7 kV PrimePACK™ or  XHP™ 2 modules can even tolerate cycling loads 40 times higher, even at temperatures 25 K higher compared to standard joining technology. This means that modules can support these increased power cycling loads even at temperatures up to 175 °C.

Thanks to this higher cycling capability, the benefits of .XT interconnection technology are numerous.

Learn more about .XT
High efficiency with robust CoolSiC™ MOSFETs

Infineon’s range of CoolSiC™ MOSFET power modules open up new opportunities for inverter designers to realize higher levels of efficiency and power density.

The CoolSiC™ MOSFET cell design was developed to limit the electric field in the gate oxide in on-state as well as in off-state to maintain reliability. In addition, a low on-resistance is achieved for all variants, which is stable and reproducible even in mass production. 

In addition to superior gate oxide reliability a stable, robust body diode is a key feature of CoolSiC ™ MOSFETs. All CoolSiC™ MOSFETs have an integrated body diode. An additional Schottky diode is not required. The CoolSiC™ MOSFET body diode is rated for hard commutation and is highly robust, withstanding 7x Inom 10 ms surge current. It proves to be long-term stable and does not drift beyond the datasheet limits.

Learn more about CoolSiC™ tech
New voltage class 2300 V for higher power converters

Infineon pioneered the new voltage class 2300 V in PrimePACK™ 3+ optimized for 1500V DC applications. We now offer a range of power modules in this voltage class with IGBT7 in PrimePACK™ 3+ and XHP™ 2 and CoolSiC™ MOSFET in XHP™ 2. This allows engineers to easily transition to higher DC voltages. 

Our modules have high-current ratings to enable high power density and low CR-FiT for reliable 1500V DC operation. Both these together can result in lower €/W of the system. 

We offer 6kV isolation in XHP™ 2 package which enables multilevel topologies to address 3kV DC applications as well. 

EconoDUAL™ 3 Wave for better cooling and lifetimes

The Wave power modules come in the standard EconoDUAL™ 3 housing but feature additional ribbon bonds on the backside for an advanced cooling concept with direct liquid cooling. The ribbon bond solution reduces overall temperatures and ripple in e-trucks, e-buses, drives, or wind applications. In addition, the Wave power modules provide up to six times longer lifetime due to better cooling or improved output current by up to 30% at same lifetime and a compact and robust design with molded terminals.

Long lifetime with .XT interconnect technology

The .XT connection technology was developed in performance modules for demanding and long-life applications, such as wind turbine converters or drive converters in traction applications and electrified trucks.

.XT for modules is characterized by improved wire bonding, reliable chip attachment enabled by sintering, and high-reliability system-soldering. These combined improvements of the interconnection eliminate the typical wear-and-tear out mechanisms, like fatigue of the bond wire and soldered chip connection that occur during cycling loads in the applications.

To fulfill application requirements, high voltage modules like the 3.3 kV XHP™ 3 can now support an increased power cycling robustness of a factor greater than 5. Low-voltage modules like the 1.2 kV and 1.7 kV PrimePACK™ or  XHP™ 2 modules can even tolerate cycling loads 40 times higher, even at temperatures 25 K higher compared to standard joining technology. This means that modules can support these increased power cycling loads even at temperatures up to 175 °C.

Thanks to this higher cycling capability, the benefits of .XT interconnection technology are numerous.

Learn more about .XT

High efficiency with robust CoolSiC™ MOSFETs

Infineon’s range of CoolSiC™ MOSFET power modules open up new opportunities for inverter designers to realize higher levels of efficiency and power density.

The CoolSiC™ MOSFET cell design was developed to limit the electric field in the gate oxide in on-state as well as in off-state to maintain reliability. In addition, a low on-resistance is achieved for all variants, which is stable and reproducible even in mass production. 

In addition to superior gate oxide reliability a stable, robust body diode is a key feature of CoolSiC ™ MOSFETs. All CoolSiC™ MOSFETs have an integrated body diode. An additional Schottky diode is not required. The CoolSiC™ MOSFET body diode is rated for hard commutation and is highly robust, withstanding 7x Inom 10 ms surge current. It proves to be long-term stable and does not drift beyond the datasheet limits.

Learn more about CoolSiC™ tech

New voltage class 2300 V for higher power converters

Infineon pioneered the new voltage class 2300 V in PrimePACK™ 3+ optimized for 1500V DC applications. We now offer a range of power modules in this voltage class with IGBT7 in PrimePACK™ 3+ and XHP™ 2 and CoolSiC™ MOSFET in XHP™ 2. This allows engineers to easily transition to higher DC voltages. 

Our modules have high-current ratings to enable high power density and low CR-FiT for reliable 1500V DC operation. Both these together can result in lower €/W of the system. 

We offer 6kV isolation in XHP™ 2 package which enables multilevel topologies to address 3kV DC applications as well. 

EconoDUAL™ 3 Wave for better cooling and lifetimes

The Wave power modules come in the standard EconoDUAL™ 3 housing but feature additional ribbon bonds on the backside for an advanced cooling concept with direct liquid cooling. The ribbon bond solution reduces overall temperatures and ripple in e-trucks, e-buses, drives, or wind applications. In addition, the Wave power modules provide up to six times longer lifetime due to better cooling or improved output current by up to 30% at same lifetime and a compact and robust design with molded terminals.

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