EiceDRIVER™ 1ED Compact Gate Driver ICs

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Easy-to-design-in up to 5.7 kV (rms), 14 A galvanically isolated single channel gate driver family with separate output or Miller clamp function in DSO-8 150 mil and 300 mil package

The EiceDRIVER™ isolated gate driver portfolio consist of a Compact series and an Enhanced series. The Compact series includes the following families:

The 1ED Compact family in DSO-8 150 mil narrow body package with functional isolation (9 variants)

  • The 1ED-AF products offer up to 10 A output current capability, with separate output.
  • The 1ED-MF products offer up to 6 A output current capability, with active Miller Clamp.

The X3 Compact family (1ED31xx) in DSO-8 150 mil narrow body and 300 mil wide body package (8-mm creepage), fulfilling the highest isolation standards (14 variants)

  • The 1ED31xxMx12H products offer up to 14 A output current capability, with separate output or Miller clamp, in DSO-8 300 mil package with UL 1577 certification VISO = 5.7 kV (rms) for 1 min and VDE 0884-11 certification (reinforced isolation) VIORM = 1767 V
  • The 1ED31xxMU12F products offer up to 14 A output current capability, with separate output or Miller clamp, in DSO-8 150 mil package with UL 1577 certification VISO = 3 kV (rms) for 1 min

The 2L-SRC Compact family (1ED32xx) implementing two-level slew-rate control

  • The 1ED32xxMx12H products offer two-level slew-rate control enabling on-the-fly & cycle-by-cycle gate resistor change. The products offer up to 18 A output current capability in a standard output configuration and a Miller Clamp option. Isolation certification includes UL 1577 certification VISO = 5.7 kV (rms) for 1 min and VDE 0884-11 certification (reinforced isolation) VIORM = 1767 V
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Highlights

EiceDRIVER™ Compact gate drivers provide driving capabilities of up to 14 A making booster solutions obsolete. They are ideal for applications using traditional switches, such as  IGBTs or  MOSFETs, but also for leading-edge technologies such as Silicon Carbide (SiC) MOSFET or IGBT7.

In particular the Miller Clamp option enables superior application safety by avoiding parasitic turn-on especially when driving CoolSiC™ SiC MOSFET and TRENCHSTOP™ IGBT7.

The most versatile and simplistic EiceDRIVER™ Compact galvanically isolated drivers are based on our coreless transformer (CT) technology, enabling a world class common mode transient immunity (CMTI) of 200 kV/μs. They are ideal for applications such as solar string inverters, EV charging, UPS, industrial drives, CAC, welding equipment, induction heating appliances, and power supplies for servers and telecommunication systems.

The tight propagation delay matching of our new X3 Compact family (1ED31xx) (7 ns max.), results in shorter deadtime and better accuracy for fast switching applications. All products offer

  • Active shutdown to ensure a safe IGBT off-state in case the output chip is not connected to the power.
  • Short-circuit clamping to limit the gate voltage during short circuit.

The drivers can operate over a wide supply voltage range, either unipolar or bipolar.

The two-level slew-rate control function in the new 2L-SRC Compact family (1ED32xx) helps to optimize system efficiency and electromagnetic interference. 

EiceDRIVER™ isolated gate driver certification

EiceDRIVER Isolated gate driver cerfitcation for EiceDRIVER compact

1) VDE 0884-10 standard expired Dec. 31, 2019, product and testing remain unchanged. 

1ED Compact 150 mil family X3 Compact (1ED31xx) family 2L-SRC Compact (1ED32xx) family
  • 1200 V input-to-output isolation voltage
  • Up to 10 A typical peak rail-to-rail output
  • 40 V/20 V absolute max. output voltage (1ED-AF/MF)
  • 300 ns propagation delay with 240 ns input filter (7 products)
  • 120 ns propagation delay with 40 ns input filter (2 products)
  • High CMTI >100 kV/μs
  • Separate source and sink outputs and Miller clamp option
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil package with 4 mm creepage distance
  • Functional isolation
  • 2300 V input-to-output isolation voltage
  • Up to 14 A typical peak rail-to-rail output
  • 40 V absolute max. output voltage
  • 90 ns propagation delay with 30 ns input filter (12 products)
  • 280 ns propagation delay with 180 ns input filter (2 products)
  • Highest CMTI >200 kV/μs
  • Separate source and sink outputs and Miller clamp option
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil package with 4 mm creepage and DSO-8 300 mil package with 8 mm creepage
  • UL 1577 certified VISO = 5.7 kV (rms) for 1 min and VDE 0884-11 certified (reinforced isolation) VIORM = 1767 V
  • Highest isolation capability, can be used in 1500 V DC solar inverter application
  • EiceDRIVER™ 2L-SRC Compact single channel isolated gate driver 1ED32xx family
  • Two-level slew-rate control feature (2L-SRC)
  • For use with 650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
  • 2300 V functional offset voltage capable for selected applications
  • Galvanically isolated coreless transformer gate driver
  • 18 A typical sinking and sourcing peak output current
  • 40 V absolute maximum output supply voltage
  • Max. 110 ns propagation delay with typ. 35 ns input filter
  • High common-mode transient immunity CMTI >200 kV/μs
  • Short-circuit clamping and active shutdown
  • DSO-8 300 mil wide-body package with large creepage distance (>8 mm)

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Trainings

Every switch needs a driver, and the right driver makes a difference.
Infineon offers different isoalted gate driver families, such as the EiceDRIVER™ Compact and the EiceDRIVER™ Enhanced. Each family has different features to protect the switch and application.
The EiceDRIVER™ isolated gate driver offers advanced features such as reinforced isolation, Miller clamp, slew rate control and short circuit protection to protect the switch and application. It also enables condition monitoring and rapid prototyping.
The EiceDRIVER™ is the perfect fit for industrial application, particular in combination with Infineon CoolSiC™ and IGBT switches.

The EiceDRIVER™ 2L-SRC Compact family (1ED32xx), with two-level slew-rate control and Miller Clamp

2L-SRC optimizes the gate resistors for EMI measurements and for normal operation, compared with the conventional solution

Up to 18 A output current, 200 kV/µs CMTI, VDE 0884-11 & UL 1577, ideal for CoolSiC™ SiC MOSFET and IGBT7 in drive, solar, UPS, etc.

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  • The EiceDRIVER™ X3 Compact family (1ED31xx), with up to 14 A output current, 2300 V functional isolation, 200 kV/µs CMTI
  • Show system benefit of Miller clamp, separate output, active shutdown, short circuit clamping, 7-ns prop. delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, SMPS

Watch now

You will have a glimpse of the different gate driver technologies available at Infineon and their benefits.

For a better understanding we will take a look at the optimization of external gate resistors to drive MOSFETs in a given application.

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With this training, you will learn how to calculate a gate resistance value for an IGBT application, how to identify suitable gate driver ICs based on peak current and power dissipation requirements, and how to fine-tune the gate resistance value in laboratory environment based on worst case conditions.

  • EiceDRIVER™ isolated gate driver family use the state-of-the-art coreless transformer (CT) isolation technology
  • The CT based isolated gate driver offers higher current, lower power consumption, better CMTI and best in class propagation delay matching
  • Perfect for CoolSiC™ SiC MOSFET and IGBT7. VDE 0884-11 & UL 1577. For solar, EV charging, industrial drive, UPS, etc.

Watch now

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