Active and preferred

IRHMS67260SCV

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IRHMS67260SCV
IRHMS67260SCV

Product details

  • Configuration
    Discrete
  • Die Size
    6
  • ESD Class
    Class 3A
  • Generation
    R6
  • ID (@100°C) max
    35 A
  • ID (@25°C) max
    45 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-254AA Low Ohmic
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    230 nC
  • QPL Part Number
    2N7584T1
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    29 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS
    200 V
  • VF max
    1.2 V
  • Voltage Class
    100 V
OPN
Product Status active and preferred
Infineon Package
Package Name TO-254AA LOW OHMIC
Packing Size N/A
Packing Type N/A
Moisture Level N/A
Moisture Packing N/A
Lead-free No
Halogen Free No
RoHS Compliant No
Infineon stock last updated:

Product Status
Active
Infineon Package
Package Name TO-254AA LOW OHMIC
Packing Size 0
Packing Type
Moisture Level -
Moisture Packing
Lead Free
Halogen Free
RoHS Compliant
The IRHMS67260SCV R6 N-channel MOSFET is designed for space applications, with a maximum voltage of 200V and maximum current of 45A. Its radiation-hardened technology allows for electrical performance up to 100krad(Si) TID, and it has been characterized for both Total Dose and Single Event Effects (SEE) with useful performance up to LET of 90 MeV·cm2/mg. The MOSFET's low RDS(on) and low gate charge make it ideal for DC-DC converters.

Applications

Documents

Design resources

Developer community

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