IRHLUB770Z4SCS

Data Sheet

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IRHLUB770Z4SCS
IRHLUB770Z4SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    Z
  • ESD Class
    Class 0
  • Generation
    R7
  • ID (@100°C) max
    0.5 A
  • ID (@25°C) max
    0.8 A
  • Language
    SPICE, SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    UB
  • Polarity
    N
  • Product Category
    Rad hard MOSFETS
  • QG
    3.6 nC
  • QPL Part Number
    2N7616UB
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    680 mΩ
  • TID max
    100 Krad(Si)
  • VBRDSS min
    60 V
  • VF max
    1.2 V
  • Voltage Class
    100 V, 100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHLUB770Z4SCS R7 N-channel MOSFET is a radiation-hard solution for power devices in space and other environments. With a rating of 60V and 0.8A, it maintains single event gate rupture and burnout immunity while interfacing easily with most logic gates, micro-controllers, and other device types. This single N-channel MOSFET is available in a UB package and offers electrical performance up to 100krad(Si) TID, with a QIRL classification.

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