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IRHF67130SCS

Data Sheet
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IRHF67130SCS
IRHF67130SCS
Data Sheet

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 2
  • Generation
    R6
  • ID (@100°C) max
    12 A
  • ID (@25°C) max
    12 A
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-205AF
  • Polarity
    N
  • QG
    54 nC
  • Qualification
    QIRL
  • RDS (on) (@25°C) max
    65 mΩ
  • SEE
    Yes
  • TID max
    100 Krad(Si)
  • VBRDSS
    100 V
  • VF max
    1.2 V
Recommended
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHF67130SCS N-channel MOSFET is a radiation-hardened device with QIRL classification, ideal for space applications. 100V and 12A rating, low RDS(on) and gate charge, and electrical stability up to 100krad(Si) TID make it perfect for DC-DC converters and motor controllers. Single Event Effects performance up to LET of 90 MeV·cm2/mg ensures high performance in harsh environments.

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