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IRHF593130

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IRHF593130
IRHF593130

Product details

  • Configuration
    Discrete
  • Die Size
    3
  • ESD Class
    Class 1B
  • Generation
    R5
  • ID (@100°C) max
    -4.3 A
  • ID (@25°C) max
    -6.7 A
  • Language
    SPICE
  • Optional TID Rating (kRad(si))
    100 300
  • Package
    TO-205AF
  • Polarity
    P
  • Product Category
    Rad hard MOSFETS
  • QG
    40 nC
  • Qualification
    COTS
  • RDS (on) (@25°C) max
    240 mΩ
  • TID max
    300 Krad(Si)
  • VBRDSS
    -100 V
  • VF max
    -5 V
  • Voltage Class
    100 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:
IRHF593130 is a R5, rad hard, -100V, -6.7A, single, P-channel MOSFET in a TO-205AF package. Its rad hard design and electrical performance up to 300krad(Si) TID make it a reliable choice for space applications. In addition to its low gate charge, which reduces power loss in switching applications, it retains the advantages of MOSFETs such as voltage control and fast switching.

Applications

Documents

Design resources

Developer community

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