IRFU3709Z

30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Data Sheet

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IRFU3709Z
IRFU3709Z
Data Sheet

Product details

  • ID (@ TC=100°C) max
    61 A
  • ID max
    86 A
  • ID (@ TC=25°C) max
    86 A
  • Mounting
    THT
  • Package
    IPAK (TO-251)
  • Polarity
    N
  • Ptot max
    79 W
  • Qgd
    5.7 nC
  • QG
    17 nC
  • RDS (on) (@10V) max
    6.5 mΩ
  • RDS (on) max
    6.5 mΩ
  • RDS (on) (@4.5V) max
    8.2 mΩ
  • RthJC max
    1.9 K/W
  • Tj max
    175 °C
  • VDS max
    30 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Industry-leading quality
  • Low RDS(ON) at 4.5V VGS
  • Fully Characterized Avalanche Voltage and Current
  • Ultra-Low Gate Impedance

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

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