IRFU3707Z

30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Data Sheet

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IRFU3707Z
IRFU3707Z
Data Sheet

Product details

  • ID (@ TC=25°C) max
    56 A
  • ID (@ TC=100°C) max
    39 A
  • ID max
    56 A
  • Mounting
    THT
  • Package
    IPAK (TO-251)
  • Polarity
    N
  • Ptot max
    50 W
  • Qgd
    3.5 nC
  • QG
    9.6 nC
  • RDS (on) max
    9.5 mΩ
  • RDS (on) (@10V) max
    9.5 mΩ
  • RDS (on) (@4.5V) max
    12.5 mΩ
  • RthJC max
    3 K/W
  • Tj max
    175 °C
  • VDS max
    30 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Industry-leading quality
  • Low RDS(ON) at 4.5V VGS
  • Fully Characterized Avalanche Voltage and Current
  • Ultra-Low Gate Impedance

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }