IRF8306M

30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance.
Data Sheet

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IRF8306M
IRF8306M
Data Sheet

Product details

  • ID (@ TC=25°C) max
    140 A
  • ID (@ TA=70°C) max
    18 A
  • ID (@ TA=25°C) max
    23 A
  • Micro-stencil
    IRF66MX-25
  • Moisture Sensitivity Level
    1
  • Mounting
    SMD
  • Package
    DirectFET MX
  • Polarity
    N
  • Ptot (@ TA=25°C) max
    2.1 W
  • Ptot max
    75 W
  • Qgd
    6.7 nC
  • QG
    25 nC
  • RDS (on) max
    2.5 mΩ
  • RDS (on) (@4.5V) max
    3.6 mΩ
  • RDS (on) (@10V) max
    2.5 mΩ
  • RthJC max
    1.66 K/W
  • Special Features
    Schottky (includes Schottky like and FETky)
  • Tj max
    150 °C
  • VDS max
    30 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
Infineon stock last updated:

Benefits

  • RoHS Compliant
  • Low Profile (less than 0.7 mm)
  • Dual Sided Cooling
  • Low Conduction Losses
  • Optimized for High Frequency Switching
  • Low Package Inductance
  • Integrated Monolithic Sckottky Diode

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{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }