IRF7105PBF-1

25V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Data Sheet

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IRF7105PBF-1
IRF7105PBF-1
Data Sheet

Product details

  • ID (@25°C) max
    -2.3 A, 3.5 A
  • Moisture Sensitivity Level
    1
  • Package
    SO-8
  • Polarity
    N+P
  • Ptot (@ TA=25°C) max
    2 W
  • Qgd (typ)
    2.8 nC, 3.1 nC
  • QG (typ @10V)
    10 nC, 9.4 nC
  • RDS (on) (@10V) max
    250 mΩ, 100 mΩ
  • RDS (on) (@4.5V) max
    400 mΩ, 160 mΩ
  • RthJA max
    62.5 K/W
  • Tj max
    150 °C
  • VDS max
    25 V
  • VGS(th)
    1 V to 3 V, -1 V to -3 V
  • VGS max
    20 V
OPN
Product Status
Infineon Package
Package Name
Packing Size
Packing Type
Moisture Level
Moisture Packing
Lead-free
Halogen Free
RoHS Compliant
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