Please note that this is an end of life product. See newer alternative product version Please note that this is an end of life product. See newer alternative product version
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END OF LIFE
discontinued
RoHS Compliant
Lead-free

IPAW60R180P7S

END OF LIFE
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
Data Sheet
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IPAW60R180P7S
IPAW60R180P7S
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Data Sheet

Product details

  • Budgetary Price €/1k
    0.61
  • ID max
    18 A
  • ID (@25°C) max
    18 A
  • IDpuls max
    53 A
  • Mounting
    THT
  • Operating Temperature
    -55 °C to 150 °C
  • Package
    TO220 FullPAK wide creepage
  • Pin Count
    3 Pins
  • Polarity
    N
  • Ptot max
    26 W
  • Qgd
    8 nC
  • QG
    25 nC
  • QG (typ @10V)
    25 nC
  • RDS (on) max
    180 mΩ
  • RDS (on) (@10V) max
    180 mΩ
  • RthJA max
    62 K/W
  • RthJC max
    4.85 K/W
  • Rth
    4.85 K/W
  • Special Features
    price/performance
  • VDS max
    600 V
  • VGS(th)
    3.5 V
OPN
IPAW60R180P7SXKSA1
Product Status discontinued
Infineon Package PG-TO220-3
Package Name TO220 FullPAK wide creepage
Packing Size 450
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead-free Yes
Halogen Free Yes
RoHS Compliant Yes
Infineon stock last updated:
View replacement

Product Status discontinued
Infineon Package PG-TO220-3
Package Name TO220 FullPAK wide creepage
Packing Size 450
Packing Type TUBE
Moisture Level NA
Moisture Packing NON DRY
Lead Free
Halogen Free
RoHS Compliant
The 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Features

  • 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G
  • ESD ruggedness of ≥ 2kV (HBM class 2)
  • Integrated gate resistor R G
  • Rugged body diode
  • Wide portfolio in through hole and surface mount packages
  • Both standard grade and industrial grade parts are available

Benefits

  • Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency
  • Ease-of-use
  • Ease-of-use in manufacturing environments by stopping ESD failures occurring
  • Integrated R G reduces MOSFET oscillation sensitivity
  • MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
  • Excellent ruggedness during hard commutation of the body diode seen in LLC topology
  • Suitable for a wide variety of end applications and output powers
  • Parts available suitable for consumer and industrial applications

Applications

Documents

Documents

Design resources

Partner solutions

Developer community

{ "ctalist":[ { "link" : "https://community.infineon.com/t5/forums/postpage/choose-node/true", "label" : "Ask the community", "labelEn" : "Ask the community" }, { "link" : "https://community.infineon.com/t5/Forums/ct-p/products", "label" : "View all discussions", "labelEn" : "View all discussions" } ] }